Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods
نویسندگان
چکیده
منابع مشابه
Band Offsets at Strained-layer Interfaces
Strained-layer heterojunctions and superlattices have recently shown tremendous potential for device applications because of their flexibility for tailoring the electronic band structure. We present a theoretical model to predict the band offsets at both latticematched and pseudomorphic strained-layer interfaces. The theory is based on the localdensity-functional pseudopotential formalism, and ...
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Rights: © 1997 American Institute of Physics. This is the accepted version of the following article: Lindell, A. & Pessa, M. & Salokatve, A. & Bernardini, F. & Nieminen, Risto M. & Paalanen, M. 1997. Band offsets at the GaInP/GaAs heterojunction. Journal of Applied Physics. Volume 82, Issue 7. 3374-3380. ISSN 0021-8979 (printed). DOI: 10.1063/1.365650, which has been published in final form at ...
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ژورنال
عنوان ژورنال: Nanomaterials
سال: 2021
ISSN: 2079-4991
DOI: 10.3390/nano11061581